دیتاشیت STP110N8F6
مشخصات دیتاشیت
نام دیتاشیت |
STP110N8F6
|
حجم فایل |
565.103
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
13
|
مشخصات
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Manufacturer:
STMicroelectronics
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Series:
STripFET™ F6
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Packaging:
Tube
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
80V
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Current - Continuous Drain (Id) @ 25°C:
110A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
6.5mOhm @ 55A, 10V
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Vgs(th) (Max) @ Id:
4.5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
150nC @ 10V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
9130pF @ 40V
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FET Feature:
-
-
Power Dissipation (Max):
200W (Tc)
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Operating Temperature:
-55°C ~ 175°C (TJ)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-220
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Package / Case:
TO-220-3
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Base Part Number:
STP110
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detail:
N-Channel 80V 110A (Tc) 200W (Tc) Through Hole TO-220