دیتاشیت STP110N8F6
مشخصات دیتاشیت
| نام دیتاشیت |
STP110N8F6
|
| حجم فایل |
565.103
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
13
|
مشخصات
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
STMicroelectronics STP110N8F6
-
Operating Temperature:
-55°C~+175°C@(Tj)
-
Power Dissipation (Pd):
200W
-
Total Gate Charge (Qg@Vgs):
150nC@10V
-
Drain Source Voltage (Vdss):
80V
-
Input Capacitance (Ciss@Vds):
9130pF@40V
-
Continuous Drain Current (Id):
110A
-
Gate Threshold Voltage (Vgs(th)@Id):
4.5V@250uA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
6.5mΩ@10V,55A
-
Package:
TO-220
-
Manufacturer:
STMicroelectronics
-
Series:
STripFET™ F6
-
Packaging:
Tube
-
Part Status:
Active
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
80V
-
Current - Continuous Drain (Id) @ 25°C:
110A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
6.5mOhm @ 55A, 10V
-
Vgs(th) (Max) @ Id:
4.5V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
150nC @ 10V
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
9130pF @ 40V
-
FET Feature:
-
-
Power Dissipation (Max):
200W (Tc)
-
Mounting Type:
Through Hole
-
Supplier Device Package:
TO-220
-
Package / Case:
TO-220-3
-
Base Part Number:
STP110
-
detail:
N-Channel 80V 110A (Tc) 200W (Tc) Through Hole TO-220
